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FDP030N06 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDP030N06 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page June 2009 ©2009 Fairchild Semiconductor Corporation FDP030N06 Rev. A www.fairchildsemi.com 1 FDP030N06 N-Channel PowerTrench® MOSFET 60V, 193A, 3.2m Ω Features • RDS(on) = 2.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC Convertors / Synchronous Rectification TO-220 G S D D G S MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGSS Gate to Source Voltage ±20 V ID Drain Current -Continuous (TC = 25 oC, Silicon Limited) 193* A -Continuous (TC = 100 oC, Silicon Limited) 136* -Continuous (TC = 25 oC, Package Limited) 120 IDM Drain Current - Pulsed (Note 1) 772 A EAS Single Pulsed Avalanche Energy (Note 2) 1434 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6 V/ns PD Power Dissipation (TC = 25 oC) 231 W - Derate above 25oC 1.54 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.65 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. |
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