June 2009

©2009 Fairchild Semiconductor Corporation

FDP030N06 Rev. A

www.fairchildsemi.com

1

FDP030N06

60V, 193A, 3.2m

Ω

Features

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

TO-220

G

S

D

D

G

S

Thermal Characteristics

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current

193*

A

136*

120

Drain Current

- Pulsed

(Note 1)

772

A

Single Pulsed Avalanche Energy

(Note 2)

1434

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6

V/ns

Power Dissipation

231

W

1.54

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

Ratings

Units

Thermal Resistance, Junction to Case

0.65

Thermal Resistance, Junction to Ambient

62.5

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.