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FGH40N60SFTU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGH40N60SFTU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FGH40N60SF Rev. A Package Marking and Ordering Information Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGH40N60SF FGH40N60SFTU TO-247 Tube 30ea - Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V ∆BV CES ∆T J Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250µA -0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -2.3 2.9 V IC = 40A, VGE = 15V, TC = 125 oC -2.5 - V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -2110 - pF Coes Output Capacitance - 200 - pF Cres Reverse Transfer Capacitance - 60 - pF Switching Characteristics td(on) Turn-On Delay Time VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25 oC -25 - ns tr Rise Time - 42 - ns td(off) Turn-Off Delay Time - 115 - ns tf Fall Time - 27 54 ns Eon Turn-On Switching Loss - 1.13 - mJ Eoff Turn-Off Switching Loss - 0.31 - mJ Ets Total Switching Loss - 1.44 - mJ td(on) Turn-On Delay Time VCC = 400V, IC = 40A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125 oC -24 - ns tr Rise Time - 43 - ns td(off) Turn-Off Delay Time - 120 - ns tf Fall Time - 30 - ns Eon Turn-On Switching Loss - 1.14 - mJ Eoff Turn-Off Switching Loss - 0.48 - mJ Ets Total Switching Loss - 1.62 - mJ Qg Total Gate Charge VCE = 400V, IC = 40A, VGE = 15V - 120 - nC Qge Gate to Emitter Charge - 14 - nC Qgc Gate to Collector Charge - 58 - nC |
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