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MA46H120-W Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA46H120-W Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page 1 GaAs Constant Gamma Flip-Chip Varactor Diode Rev. V3 MA46H120 Series • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/ or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit- ment to produce in volume is not guaranteed. Features • Constant Gamma for Linear Tuning • Low Parasitic Capacitance • High Q • Silicon Nitride Passivation • Polyimide Scratch Protection • Surface Mount Configuration Description M/A - COM Technology Solutions’ MA46H120 series is a gallium arsenide flip chip hyperabrupt varactor diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The MA46H120 diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. Ordering Information Part Number Package MA46H120-W Whole Wafer MA46H120 Gel Pack MAVR-000120-12030W Waffle Pack Absolute Maximum Ratings 1,2 Operating Temperature -40°C to +125°C Storage Temperature -65°C to +150°C Power Dissipation 100 mW Mounting Temperature +235°C for 10 seconds 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. * Specifications are subject to change without prior notification Chip Layout Front View (Circuit Side) Back View (Operator Side) Schematic Electrical Specifications @ TA = +25 °C Breakdown Voltage @ IR = 10μA, Vb = 20 V Minimum Reverse Leakage Current @ VR =14V, IR = 100 nA Maximum |
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