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MASWSS0100-DIE Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part # MASWSS0100-DIE
Description  GaAs SP3T 2.5 V High Power Switch 0.1 - 3.0 GHz
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASWSS0100-DIE Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
GaAs SP3T 2.5 V High Power Switch
0.1 - 3.0 GHz
Rev. V2
MASWSS0100
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
0.5
0.6
0.65
Isolation
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
23
25
20
Return Loss
0.5 - 2.5 GHz
dB
20
P.1dB
dBm
38
2
nd Harmonic
1.0 GHz, PIN = +34 dBm
dBc
-80
3
rd Harmonic
1.0 GHz, PIN = +34 dBm
dBc
-70
-65
Trise, Tfall
10% to 90% RF, 90% to 10% RF
nS
83
Ton, Toff
50% control to 90% RF
50% control to 10% RF
nS
94
Transients
In Band
mV
58
Control Current
2.5 V
µA
50
80
4. External DC blocking capacitors are required on all RF ports.
5. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.
Electrical Specifications: TA = 25°C, VC = 0 V / 2.5 V, Z0 = 50
Ω 4
V1
V2
V3
RFC–
RF1
RFC-
RF2
RFC -
RF3
1
0
0
On
Off
Off
0
1
0
Off
On
Off
0
0
1
Off
Off
On
Truth Table
6,7
6. State 0 = -5 V to +2.5 V, State 1 = -2.5 V to +5 V.
7. Differential voltage, V (state 1) - V (state 0), must be 2.5 V
minimum.
Qualification
Qualified
to
M/A-COM
specification
REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
Functional Diagram


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