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M24L416256SA-70TEG Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc. |
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M24L416256SA-70TEG Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc. |
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4 / 14 page  ESMT M24L416256SA Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2008 Revision: 1.4 4/14 Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature .................................–65°C to +150°C Ambient Temperature with Power Applied ..............................................–55°C to +125°C Supply Voltage to Ground Potential ................−0.4V to 4.6V DC Voltage Applied to Outputs in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V Output Current into Outputs (LOW) ............................20 mA Static Discharge Voltage ......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current ....................................................> 200 mA Operating Range Range Ambient Temperature (TA) VCC Extended −25°C to +85°C 2.7V to 3.6V Industrial −40°C to +85°C 2.7V to 3.6V DC Electrical Characteristics (Over the Operating Range) -55, 60, 70 Parameter Description Test Conditions Min. Typ.[5] Max. Unit VCC Supply Voltage 2.7 3.0 3.6 V VOH Output HIGH Voltage IOH = −0.1 mA VCC = 2.7V VCC – 0.4 V VOL Output LOW Voltage IOL = 0.1 mA VCC = 2.7V 0.4 V VIH Input HIGH Voltage 0.8 * VCC VCC + 0.4 V VIL Input LOW Voltage -0.4 0.6 V IIX Input Leakage Current GND ≤ VIN ≤ Vcc -1 +1 µA IOZ Output Leakage Current GND ≤ VOUT ≤ Vcc, Output Disabled -1 +1 µA f = fMAX = 1/tRC 14 for –55 14 for –60 8 for –70 22 for –55 22 for –60 15 for –70 ICC VCC Operating Supply Current f = 1 MHz VCC = VCCmax, IOUT = 0 mA, CMOS level 1 for all speeds 5 for all speeds mA ISB1 Automatic CE Power-down Current —CMOS Inputs CE ≥ VCC − 0.2V, VIN ≥ VCC − 0.2V, VIN ≤ 0.2V, f = fMAX(Address and Data Only),f = 0 ( OE , WE , BHE and BLE ), VCC = 3.6V 150 250 µA ISB2 Automatic CE Power-down Current —CMOS Inputs CE ≥ VCC − 0.2V, VIN ≥ VCC − 0.2V or VIN ≤ 0.2V, f = 0, VCC = 3.6V 17 40 µA Thermal Resistance[9] Parameter Description Test Conditions VFBGA Unit θJA Thermal Resistance (Junction to Ambient) 55 ° C/W θJC Thermal Resistance (Junction to Case) Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 17 ° C/W Capacitance[9] Parameter Description Test Conditions Max. Unit CIN Input Capacitance 8 pF COUT Output Capacitance TA = 25°C, f = 1 MHz VCC = VCC(typ) 8 pF Notes: 6.VIL(MIN) = –0.5V for pulse durations less than 20 ns. 7.VIH(Max) = VCC + 0.5V for pulse durations less than 20 ns. 8.Overshoot and undershoot specifications are characterized and are not 100% tested. 9.Tested initially and after any design or process changes that may affect these parameters. |
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