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M52D32321A Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc.

Part # M52D32321A
Description  512K x 32Bit x 2Banks Mobile Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M52D32321A Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M52D32321A
Elite Semiconductor Memory Technology Inc.
Publication Date : May 2009
Revision : 1.6
4/30
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 C
° ~ 70 C
° )
Version
Parameter
Symbol
Test Condition
-7
-10
Unit Note
Operating Current
(One Bank Active)
ICC1
Burst Length = 1
tRC
tRC (min), tCC tCC (min), IOL= 0mA
55
35
mA
1
ICC2P
CKE
VIL(max), tCC =15ns
0.3
mA
Precharge Standby
Current in power-down
mode
ICC2PS
CKE
VIL(max), CLK VIL(max), tCC =
0.2
mA
ICC2N
CKE
VIH(min), CS VIH(min), tCC =15ns
Input signals are changed one time during 30ns
3
mA
Precharge Standby
Current in non
power-down mode
ICC2NS
CKE
VIH(min), CLK VIL(max), tCC =
Input signals are stable
1
mA
ICC3P
CKE
VIL(max), tCC =15ns
1.5
Active Standby Current
in power-down mode
ICC3PS
CKE
VIL(max), CLK VIL(max), tCC =
1
mA
ICC3N
CKE
VIH(min), CS VIH(min), tCC=15ns
Input signals are changed one time during 2clks
All other pins
VDD-0.2V or 0.2V
10
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
ICC3NS
CKE
VIH (min), CLK VIL(max), tCC=
Input signals are stable
2.5
mA
Operating Current
(Burst Mode)
ICC4
IOL= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
70
60
mA
1
Refresh Current
ICC5
tRFC tRFC(min)
40
40
mA
2
TCSR range
45
70
C
°
2 Banks
180
200
Self Refresh Current
ICC6
CKE
0.2V
1 Bank
160
180
uA
Deep Power Down
Current
ICC7
CKE
0.2V
10
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).


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