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MASW-000834-13560T Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW-000834-13560T Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 12 page 1 HMICTM PIN Diode SPDT 50 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications Rev. V8 MASW-000834-13560T • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Exceptional Broadband Performance, 0.05 - 6.0 GHz • Low Loss: TX = 0.33 dB @ 2010 MHz, 5V / 20mA • Low Loss: TX = 0.38 dB @ 3.5 GHz, 5V / 20mA • High Isolation: Rx = 44dB @ 2010 MHz, 20mA / 5V • High Isolation: Rx = 36dB @ 3.5 GHz, 20mA / 5V • High TX RF Input Power = 50 W C.W. @ 2010MHz • High Tx RF Input Peak Power > 1000 W • Suitable for Very High Power TD-SCDMA & WiMAX Applications • Surface Mount 4mm PQFN Package, RoHS* Compliant Description and Applications The MASW-000834-13560T is a SPDT Broadband, high linearity, common anode, PIN diode T/R switch for 0.05 - 6.0 GHz applications, including WiMAX & WiFi. The device is provided in industry standard 4mm PQFN plastic packaging. This device incorporates a PIN diode die fabricated with M/A-COM Technology Solutions patented Silicon-Glass HMICTM process. This chip features two silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The topside is fully encapsulated with silicon nitride and has an additional polymer passivation layer. These polymer protective coatings prevent damage and contamination during handling and assembly. This compact 4mm PQFN package, SPDT switch offers wideband 0.05 - 6.0 GHz performance with excellent isolation to loss ratio for both TX and RX states. The PIN diode provides 50 W typical C.W. power handling and 65 dBm IIP3 at 2010 MHz for maximum switch performance. Absolute Maximum Ratings 1,2 @ TA = +25 °C (unless otherwise specified) Parameter Absolute Maximum Forward Current | 100 mA | Reverse Voltage ( RF & D.C. ) | -200 V | Operating Temperature -40 °C to +85 °C Storage Temperature -55 °C to +150 °C Junction Temperature +175 °C TX Incident C.W. Power 50W (47 dBm) 3 @ 2010MHz TX Peak Incident Power >300 W, 5us, 1% duty 1. Exceeding these limits may cause permanent damage. 2. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 3. Baseplate Temperature must be controlled to a constant +25°C. See page 7 for derating curve. Pin Configuration: (Center Metal Area is RF, D.C., and Thermal Ground) Pin Function Pin Function 1 GND 9 DC2 2 ANT 10 N/C 3 GND 11 N/C 4 N/C 12 N/C 5 N/C 13 GND 6 GND 14 TX 7 RX 15 GND 8 GND 16 N/C Functional Diagram (TOP VIEW) Ordering Information Part Number Package MASW-000834-13560T Tape and Reel MASW-000834-001SMB Sample Board MADR-008851-0001TB Sample Board with recommended external Driver & MASW-000834- 13560T Switch * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. Static Sensitivity These devices are rated Class 1B Human Body. Proper ESD control techniques should be used when handling these devices. N/C GND TX GND GND GND GND GND N/C N/C RX DC2 ANT (Pin 1) (Pin 16) N/C N/C N/C N/C GND TX GND GND GND GND GND N/C N/C RX DC2 DC2 ANT (Pin 1) (Pin 16) N/C N/C N/C |
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