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GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V5

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-

able. Commitment to produce in volume is not guaranteed.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

Features

• Low Series Resistance

• Low Capacitance

• High Cutoff Frequency

• Silicon Nitride Passivation

• Polyimide Scratch Protection

• Designed for Easy Circuit Insertion

Description and Applications

M/A-COM's MA4E1317 single, MA4E1318 anti-

parallel

pair,

MA4E1319-1

reverse

tee,

MA4E1319-2 series tee and MA4E2160 uncon-

nected anti-parallel pair are gallium arsenide flip

chip Schottky barrier diodes. These devices are

fabricated on OMCVD epitaxial wafers using a

process designed for high device uniformity and

extremely low parasitics.

The diodes are fully

passivated with silicon nitride and have an addi-

tional layer of polyimide for scratch protection.

The protective coatings prevent damage to the

junction during automated or manual handling.

The flip chip configuration is suitable for pick

and place insertion. The high cutoff frequency

of these diodes allows use through millimeter

wave frequencies. Typical applications include

single and double balanced mixers in PCN

transceivers and radios, police radar detectors,

and automotive radar detectors.

The devices

can be used through 80 GHz.

The MA4E1318 anti-parallel pair is designed for

use in sub harmonically pumped mixers. Close

matching of the diode characteristics results in

high LO suppression at the RF input.

MA4E1317

MA4E1318

MA4E1319-1

MA4E1319-2

MA4E2160