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M52S32321A-6BIG Datasheet(PDF) 2 Page - Elite Semiconductor Memory Technology Inc.

Part # M52S32321A-6BIG
Description  512K x 32Bit x 2Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M52S32321A-6BIG Datasheet(HTML) 2 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M52S32321A
Operation Temperature Condition -40
℃~85℃
Elite Semiconductor Memory Technology Inc.
Publication Date : Nov. 2008
Revision : 1.0
2/29
FUNCTIONAL BLOCK DIAGRAM
Bank Select
Data Input Register
Column Decoder
Latency & Burst Length
Programming Register
512K x 32
512K x 32
Timing Register
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LDQM
LWCBR
DQi
LDQM
LWE
LRAS
LCBR
LWE
LCAS
CLK
ADD
LCKE
PIN FUNCTION DESCRIPTION
Pin
Name
Input Function
CLK
System Clock
Active on the positive going edge to sample all inputs.
CS
Chip Select
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and L(U)DQM.
CKE
Clock Enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
A0 ~ A10
Address
Row / column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA10, column address : CA0 ~ CA7
BA
Bank Select Address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
RAS
Row Address Strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
CAS
Column Address Strobe
Latches column addresses on the positive going edge of the CLK with
CAS low.
Enables column access.
WE
Write Enable
Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
L(U)DQM
Data Input / Output Mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.


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