ESMT

M52S32321A

Elite Semiconductor Memory Technology Inc.

Publication Date : Jan. 2009

Revision : 1.5

3/29

DQ0 ~ 31

Data Input / Output

Data inputs/outputs are multiplexed on the same pins.

VDD/VSS

Power Supply/Ground

Power and ground for the input buffers and the core logic.

VDDQ/VSSQ

Data Output Power/Ground

Isolated power supply and ground for the output buffers to provide improved

noise immunity.

N.C/RFU

No Connection/

Reserved for Future Use

This pin is recommended to be left No Connection on the device.

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

-1.0 ~ 3.6

V

-1.0 ~ 3.6

V

Storage temperature

-55 ~ + 150

C

°

Power dissipation

0.7

W

Short circuit current

50

mA

Note:

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

2.3

2.5

2.7

V

Input logic high voltage

2.5

V

1

Input logic low voltage

-0.3

0

0.3

V

2

Output logic high voltage

-

-

V

Output logic low voltage

-

-

0.2

V

Input leakage current

-5

-

5

uA

3

Output leakage current

-5

-

5

uA

4

Note :

3.Any input 0V

4.Dout is disabled, 0V

CAPACITANCE

°

, f = 1MHz)

Pin

Symbol

Min

Max

Unit

CLOCK

-

4.0

pF

RAS , CAS , WE , CS , CKE, LDQM,

UDQM

-

4.0

pF

ADDRESS

-

4.0

pF

DQ0 ~DQ31

-

6.0

pF