M53D128168A datasheet(5/46 Pages) ESMT

Part #	M53D128168A

Description	2M x 16 Bit x 4 Banks Mobile DDR SDRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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ESMT

M53D128168A

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date : Dec. 2008

Revision : 1.0

5/46

TCSR range

15

45

70

85

C

°

4 Banks

340

360

380

400

2 Bank

290

310

320

350

Self Refresh Current

ICC6

CKE = Low, CS = High,

tck = tck (min), address &

control & data inputs are

stable

1 Bank

240

260

280

300

uA

Deep Power Down

Current

ICC7

address & control & data inputs are stable

10

uA

Note: 1. It has +/- 5 °C tolerance.

2. ICC specifications are tested after the device is properly intialized.

3. Definitions for ICC: LOW is defined as V IN ≤ 0.1 * V DDQ ;

HIGH is defined as V IN ≥ 0.9 * V DDQ ;

STABLE is defined as inputs stable at a HIGH or LOW level ;

SWITCHING is defined as: - address and command: inputs changing between HIGH and LOW once

per two clock cycles ;

- data bus inputs: DQ changing between HIGH and LOW once per clock

cycle; DM and DQS are STABLE.

AC Operation Conditions & Timing Specification

AC Operation Conditions

Parameter

Symbol

Min

Max

Unit

Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals

VIH(AC)

0.8 x VDDQ

VDDQ+0.3

V

Input Low (Logic 0) Voltage, DQ, DQS and DM signals

VIL(AC)

-0.3

0.2 x VDDQ

V

Input Different Voltage, CLK and CLK inputs

VID(AC)

0.6 x VDDQ

VDDQ+0.3

V

1

Input Crossing Point Voltage, CLK and CLK inputs

VIX(AC)

0.4 x VDDQ

0.6 x VDDQ

V

2

Note1. VID is the magnitude of the difference between the input level on CLK and the input on CLK .

2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the

same.

Input / Output Capacitance

(VDD = 1.8V, VDDQ =1.8V, TA = 25 C

° , f = 1MHz)

Parameter

Symbol

Min

Max

Unit

Input capacitance

(A0~A11, BA0~BA1, CKE, CS , RAS , CAS , WE )

CIN1

1.5

3.0

pF

Input capacitance (CLK, CLK )

CIN2

1.5

3.5

pF

Data & DQS input/output capacitance

COUT

2.0

4.5

pF

Input capacitance (DM)

CIN3

2.0

4.5

pF

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M53D128168A Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc.

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