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MA4SW210 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4SW210 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 8 page • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 HMIC™ Silicon PIN Diode Switches RoHS Compliant Rev. V7 MA4SW110 MA4SW210 MA4SW310 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs ♦ Rugged Fully Monolithic, Glass Encapsulated Chip with Polymer Protection Coating ♦ Up to +30dBm C.W. Power Handling @ +25°C Description The MA4SW110, MA4SW210 and MA4SW310 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMIC TM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 , AuSn solder or conductive Ag epoxy. Absolute Maximum Ratings @ TA +25°C Parameter Absolute Maximum Operating Temperature -65 oC to +125oC Storage Temperature -65 oC to +150oC Junction Temperature +175 oC Applied Reverse Voltage - 50V RF C.W. Incident Power +30dBm C.W. Bias Current +25°C ± 20mA MA4SW110 Max. operating conditions for a combination of RF power, D.C. bias and temperature: +30dBm CW @ 15mA (per diode) @+85°C MA4SW210 MA4SW310 |
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Similar Description - MA4SW210 |
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