25AA640/25LC640

DS21223H-page 2

© 2008 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-65°C to 125°C

ESD protection on all pins .......................................................................................................................................... 4 kV

TABLE 1-1:

DC CHARACTERISTICS

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an

extended period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym

Characteristics

Min

Max

Units

Conditions

D1

High-level input

voltage

2.0

V

≥ 2.7V (Note 1)

D2

V

D3

Low-level input

voltage

-0.3

0.8

V

≥ 2.7V (Note 1)

D4

-0.3

D5

Low-level output

voltage

—0.4

V

—0.2

V

D6

High-level output

voltage

—

V

μA

D7

Input leakage current

—

±1

D8

Output leakage

current

—±1

D9

Internal Capacitance

(all inputs and

outputs)

—7

pF

D10

—

—

1

500

mA

μA

SO = Open

SO = Open

D11

—

—

5

3

mA

mA

D12

Standby Current

—

—

5

1

μA

μA

Note 1:

This parameter is periodically sampled and not 100% tested.