P r o d u c t I n n o v a t i o n F r o m

PA04 • PA04A

2

PA04U

ABSOLUTEMAXIMUMRATINGS

SUPPLY VOLTAGE, +V

200V

BOOST VOLTAGE

SUPPLY VOLTAGE +20V

OUTPUT CURRENT, within SOA

20A

POWER DISSIPATION, internal

200W

INPUT VOLTAGE, differential

±20V

INPUT VOLTAGE, common mode

±V

S

TEMPERATURE, pin solder - 10s

300°C

150°C

TEMPERATURE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

SPECIFICATIONS

PA04

PA04A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

5

10

2

5

mV

OFFSET VOLTAGE, vs. temperature

Full temperature range

30

50

10

30

µV/°C

OFFSET VOLTAGE, vs. supply

15

*

µV/V

OFFSET VOLTAGE, vs. power

Full temperature range

30

10

µV/W

BIAS CURRENT, initial

10

50

5

20

pA

BIAS CURRENT, vs. supply

.01

*

pA/V

OFFSET CURRENT, initial

10

50

5

20

pA

INPUT IMPEDANCE, DC

*

Ω

INPUT CAPACITANCE

13

*

pF

COMMON MODE VOLTAGE RANGE

Full temperature range

±V

*

V

COMMON MODE REJECTION, DC

Full temp. range, V

86

98

*

*

dB

INPUT NOISE

100kHz BW, R

10

*

µVrms

GAIN

OPEN LOOP, @ 15Hz

Full temperature range, C

94

102

*

*

dB

GAIN BANDWIDTH PRODUCT

I

2

*

MHz

POWER BANDWIDTH

R

90

*

kHz

C

PHASE MARGIN

Full temperature range

60

*

°

OUTPUT

VOLTAGE SWING

I

±V

±V

*

*

V

VOLTAGE SWING

V

±V

±V

*

*

V

CURRENT, peak

20

*

A

SETTLING TIME to .1%

A

2.5

*

µs

SLEW RATE

A

40

50

*

V/µs

CAPACITIVE LOAD

Full temperature range, A

10

*

nF

RESISTANCE

2

*

Ω

POWER SUPPLY

VOLTAGE

Full temperature range

±15

±75

±100

*

*

*

V

CURRENT, quiescent, boost supply

30

40

*

*

mA

CURRENT, quiescent, total

70

90

*

*

mA

CURRENT, quiescent, total, sleep mode Full temperature range

3

5

*

*

mA

THERMAL

Full temperature range, F>60Hz

.3

.4

*

*

°C/W

RESISTANCE, DC, junction to case

Full temperature range, F<60Hz

.5

.6

*

*

°C/W

Full temperature range

12

*

°C/W

TEMPERATURE RANGE, case

Meets full range specification

–25

85

*

*

°C

NOTES: *

The specification of PA04A is identical to the specification for PA04 in applicable column to the left.

1. Unless otherwise noted: T

age is typical rating. ±V

2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF. For guidance, refer to the heatsink data sheet.

3. Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.

4. The PA04 must be used with a heatsink or the quiescent power may drive the unit to junction temperatures higher than 150°C.

The PA04 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION