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MADP-042908-13060 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MADP-042908-13060 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 4 page • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. SURMOUNTTM 8µM PIN Diodes RoHS Compliant M/A-COM Products Rev. V1 MADP-042XX8-13060 Series ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Surface Mount • No Wirebonds Required • Rugged Silicon-Glass Construction • Silicon Nitride Passivation • Polymer Scratch Protection • Low Parasitic Capacitance and Inductance • High Average and Peak Power Handling • RoHS Compliant Description This device is a silicon, glass PIN diode surmount chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This vertical topology provides for exceptional heat transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. Applications These packageless devices are suitable for moderate incident power applications, ≤ 10W/C.W. or where the peak power is ≤ 52W, pulse width is ≤ 1μS, and duty cycle is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and excellent RC constant , make these devices a superior choice for higher frequency switch elements when compared to their plastic package counterparts. INCHES MM MIN MAX MIN MAX A 0.040 0.042 1.025 1.075 B 0.021 0.023 0.525 0.575 C 0.004 0.008 0.102 0.203 D 0.013 0.015 0.325 0.375 E 0.011 0.013 0.275 0.325 F 0.013 0.015 0.325 0.375 G 0.019 0.021 0.475 0.525 DIM Parameter Absolute Maximum MADP-042…-13060 308 408 508 908 C.W. Incident Power dBm +42 +44 +43 +39 Forward Current 250 mA Reverse Voltage -100 V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C Mounting Temperature +280°C for 10 seconds Absolute Maximum Ratings 1@ T AMB = +25°C (unless otherwise specified) 1. Exceeding these limits may cause permanent damage. G D E F Notes: 1. Backside metal: 0.1 μM thick. 2. Yellow hatched areas indicate backside ohmic gold contacts. 3. All devices have the same outline dimensions ( A to G). |
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