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CM200DY-34A Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # CM200DY-34A
Description  IGBT MODULES HIGH POWER SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM200DY-34A Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

  CM200DY-34A_09 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor CM200DY-34A_09 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor CM200DY-34A_09 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor CM200DY-34A_09 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor CM200DY-34A_09 Datasheet HTML 5Page - Mitsubishi Electric Semiconductor  
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Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DY-34A
HIGH POWER SWITCHING USE
Conditions:
VCC = 1000V
VGE =
±15V
RG = 2.4
Ω
Tj = 125
°C
Inductive load
102
103
101
2
3
5
7
2
3
5
7
101
102
57
103
23
5
7
23
td(off)
td(on)
tf
tr
Conditions:
VCC = 1000V
VGE =
±15V
IC = 200A
Tj = 125
°C
Inductive load
101
102
2
3
5
7
103
2
3
5
7
104
2
3
5
7
100
101
57
102
23
5
7
23
td(off)
td(on)
tf
tr
100
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
101
102
57
103
23
5
7
23
Conditions:
VCC = 1000V
VGE =
±15V
RG = 2.4
Ω
Tj = 125
°C
Inductive load
Err
Eon
Eoff
103
102
101
Conditions:
VCC = 1000V
VGE =
±15V
IC = 200A
Tj = 125
°C
Inductive load
Eoff
Err
Eon
2
3
5
7
2
3
5
7
100
101
57
102
23
5
7
23
101
102
23
5 7
103
23
5 7
101
102
2
3
5
7
2
3
5
7
103
trr
Irr
Conditions:
VCC = 1000V
VGE =
±15V
RG = 2.4
Ω
Tj = 25
°C
Inductive load
10–3
100
7
5
3
2
10–2
7
5
3
2
10–1
7
5
3
2
10–523 5710–423 5710–323 5710–223 5710–123 57100 23 57101
IGBT part:
Per unit base = Rth(j–c) = 0.063
K/W
FWDi part:
Per unit base = Rth(j–c) = 0.11
K/W
Single Pulse
Tc= 25
°C
Tc measured point is
just under the chips
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
(TYPICAL)
GATE RESISTANCE RG (
Ω)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
GATE RESISTANCE RG (
Ω)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
TIME (s)


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