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CM400DU-12NFH Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM400DU-12NFH Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Feb. 2009 2 Gate-emitter threshold voltage Thermal resistance*1 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25 °C Tj = 125 °C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE = ±15V RG = 3.1 Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 400 800 400 800 960 1640 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE V V A A A A W W °C °C Vrms N • m N • m g 1 0.5 2.7 — 110 7.2 4.0 — 400 200 700 150 200 — 2.6 0.13 0.18 — 0.076*3 16 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω — — 2.0 1.95 — — — 2480 — — — — — 7.7 — — — 0.04 — — — — — — — — — — — — — — — — — — — — — 1.6 6V V 57 ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. 4. No short circuit capability is designed. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short Operation Pulse (Note 2) Operation Pulse (Note 2) TC = 25 °C TC’ = 25 °C*4 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — Unit Typ. Limits Min. Max. Test conditions MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) |
Similar Part No. - CM400DU-12NFH_09 |
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Similar Description - CM400DU-12NFH_09 |
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