CM1200HG-66H_09 datasheet(3/7 Pages) MITSUBISHI

Part #	CM1200HG-66H

Description	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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3 / 7 page

May 2009

3

MITSUBISHI HVIGBT MODULES

CM1200HG-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol

Item

Conditions

—

6.0

9.0

17.5

—

Typ

Limits

Max

Min

Unit

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

Thermal resistance

Contact thermal resistance

Junction to Case, IGBT part

Junction to Case, FWDi part

Case to Fin,

λgrease = 1W/m·K, D(c-f) = 100 µm

K/kW

MECHANICAL CHARACTERISTICS

Symbol

Item

Conditions

7.0

3.0

1.0

—

600

26

56

—

1.35

—

17

0.14

15.0

6.0

3.0

—

Typ

Limits

Max

Min

Unit

Mt

Ms

Mt

m

CTI

da

ds

LP CE

RCC’+EE’

Mounting torque

Mass

Comparative tracking index

Clearance

Creepage distance

Internal inductance

Internal lead resistance

M8: Main terminals screw

M6: Mounting screw

M4: Auxiliary terminals screw

Tc = 25

°C

N·m

kg

—

mm

nH

m

Ω

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125

°C).

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed Tjmax rating (150

°C).

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of

0.1VCE x 0.1IC x dt.

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CM1200HG-66H Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

CM1200HG-66H Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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