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CM1500HC-66R Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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CM1500HC-66R Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 8 page PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 1 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE ● IC............................................................... 1500 A ● VCES ....................................................... 3300V ● 1-element in a Pack ● Insulated Type ● LPT-IGBT / Soft Recovery Diode ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1500HC-66R OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM >PET+PBT< >PET+PBT< SCREWING DEPTH MIN 16.5 SCREWING DEPTH MIN 7.7 3 5 4 6 (E) (E) (C) 1 2 (E) (C) (C) E G C C EG 6 5 4 3 2 1 3-M4 NUTS 8- φ7 MOUNTING HOLES 6-M8 NUTS 190 ±0.5 29.5 ±0.5 20.25 ±0.3 41.25 ±0.3 13 ±0.3 79.4 ±0.3 61.5 ±0.3 61.5 ±0.3 57 ±0.25 57 ±0.25 57 ±0.25 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
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