CM1500HC-66R datasheet(1/8 Pages) MITSUBISHI

Part #	CM1500HC-66R

Description	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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PRELIMINARY

Notice:

This

is not

a final

specification.

Some

parametric

limits

are subject

to change.

Mar. 2009

1

MITSUBISHI HVIGBT MODULES

CM1500HC-66R

HIGH POWER SWITCHING USE

INSULATED TYPE

● IC............................................................... 1500 A

● VCES ....................................................... 3300V

● 1-element in a Pack

● Insulated Type

● LPT-IGBT / Soft Recovery Diode

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

CM1500HC-66R

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

CIRCUIT DIAGRAM

>PET+PBT<

SCREWING DEPTH

MIN 16.5

SCREWING DEPTH

MIN 7.7

3

5

4

6

(E)

(C)

1

2

(E)

(C)

E

G

C

EG

6

5

4

3

2

1

3-M4 NUTS

8-

φ7 MOUNTING HOLES

6-M8 NUTS

190 ±0.5

29.5 ±0.5

20.25 ±0.3

41.25 ±0.3

13 ±0.3

79.4 ±0.3

61.5 ±0.3

57 ±0.25

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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CM1500HC-66R Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

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