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ML520G51 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # ML520G51
Description  LASER DIODES FOR DISPLAY SYSTEM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

ML520G51 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI
ELECTRIC
( 1 / 4 )
ML5xx51 LD SERIES
MITSUBISHI LASER DIODES
FOR DISPLAY SYSTEM
ML520G51
TYPE
NAME
DESCRIPTION
Mitsubishi ML520G51 is a high-power, high-
efficient semiconductor laser diode which provides
emission wavelength of 638 nm and standard light
output of 150mW.
This LD has broad-stripe structure which enables
high output power.
FEATURES
APPLICATION
• High Output Power: 150mW (CW)
• High Efficiency: 1.0mW/mA (typ.)
• Visible Light: 638nm (typ.)
φ5.6mm TO-CAN PKG
• Display system, Bio-medical
ABSOLUTE MAXIMUM RATINGS (Note 1)
°C
-40 ~ +100
-
Storage temperature
Tstg
°C
-5 ~ +55
-
Case temperature
Tc
V
2
-
Reverse voltage
VRL
mW
150
CW
Light output power
Po
Unit
Ratings
Conditions
Parameter
Symbol
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time.
This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued
by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
°
45
35
25
CW, Po=150mW
Beam divergence angle
(perpendicular)
θ
°
13
7
1
CW, Po=150mW
Beam divergence angle
(parallel)
θ//
nm
644
638
632
CW, Po=150mW
Peak wavelength
λp
mW/mA
1.3
1.0
0.8
CW, Po=150mW
Slope efficiency
η
V
2.5
2.1
1.8
CW, Po=150mW
Operating voltage
Vop
mA
330
260
200
CW, Po=150mW
Operating current
Iop
mA
180
130
80
CW
Threshold current
Ith
Unit
Max
Typ.
Min.
Test conditions
Parameter
Symbol
Please note that this data sheet may be changed without any notice.


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