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ML520G51 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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ML520G51 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page MITSUBISHI ELECTRIC ( 1 / 4 ) ML5xx51 LD SERIES MITSUBISHI LASER DIODES FOR DISPLAY SYSTEM ML520G51 TYPE NAME DESCRIPTION Mitsubishi ML520G51 is a high-power, high- efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light output of 150mW. This LD has broad-stripe structure which enables high output power. FEATURES APPLICATION • High Output Power: 150mW (CW) • High Efficiency: 1.0mW/mA (typ.) • Visible Light: 638nm (typ.) • φ5.6mm TO-CAN PKG • Display system, Bio-medical ABSOLUTE MAXIMUM RATINGS (Note 1) °C -40 ~ +100 - Storage temperature Tstg °C -5 ~ +55 - Case temperature Tc V 2 - Reverse voltage VRL mW 150 CW Light output power Po Unit Ratings Conditions Parameter Symbol Note1: The maximum rating means the limitation over which the laser should not be operated even instant time. This does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report issued by Quality Assurance Section, HF & Optical Semiconductor Division, Mitsubishi Electric Corporation. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C) ° 45 35 25 CW, Po=150mW Beam divergence angle (perpendicular) θ⊥ ° 13 7 1 CW, Po=150mW Beam divergence angle (parallel) θ// nm 644 638 632 CW, Po=150mW Peak wavelength λp mW/mA 1.3 1.0 0.8 CW, Po=150mW Slope efficiency η V 2.5 2.1 1.8 CW, Po=150mW Operating voltage Vop mA 330 260 200 CW, Po=150mW Operating current Iop mA 180 130 80 CW Threshold current Ith Unit Max Typ. Min. Test conditions Parameter Symbol Please note that this data sheet may be changed without any notice. |
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