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PM150CS1D060 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # PM150CS1D060
Description  INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PM150CS1D060 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CS1D060
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
8
40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160 180
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
VCC = 300V
VD = 15V
Tj = 25
°C
Tj = 125
°C
Inductive load
VCC = 300V
VD = 15V
Tj = 25
°C
Tj = 125
°C
Inductive load
N-side
P-side
VD = 15V
Tj = 25
°C
Tj = 125
°C
0
180
Eon
Eoff
020 406080 100 120 140 160 180
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
VCC = 300V
VD = 15V
Tj = 25
°C
Tj = 125
°C
Inductive load
20
Irr
trr
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
5
10
15
20
25
30
35
40
45
COLLECTOR CURRENT IC (A)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
SWITCHING RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
fc (kHz)
ID VS. fc CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VD = 15V
–50
0
50
100
150
–50
0
50
100
150
COLLECTOR RECOVERY CURRENT –IC (A)
Tj (
°C)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
Tj (
°C)
UVt
UVr


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