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RA07M1317MSA-101 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # RA07M1317MSA-101
Description  135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA07M1317MSA-101 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF MOSFET MODULE
RA07M1317MSA
RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317MSA
MITSUBISHI ELECTRIC
28 Jan 2008
1/8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>6.7W @ VDD=7.2V, VGG=3.5V, Pin=20mW
η
T>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 9.6 x 5.3 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M1317MSA-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07M1317MSA-101
Antistatic tray,
25 modules/tray
BLOCK DIAGRAM
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
3
2
4
1
5


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