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RD06HHF1 Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor |
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RD06HHF1 Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor |
8 / 8 page MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 MITSUBISHI ELECTRIC 7 Mar 2008 OBSERVE HANDLING PRECAUTIONS Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Keep safety first in your circuit designs! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. warning ! 8/8 |
Similar Part No. - RD06HHF1_08 |
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Similar Description - RD06HHF1_08 |
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