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MCP40D17T Datasheet(PDF) 7 Page - Microchip Technology

Part # MCP40D17T
Description  7-Bit Single I2C??(with Command Code) Digital POT with Volatile Memory in SC70
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP40D17T Datasheet(HTML) 7 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22152B-page 7
MCP40D17/18/19
Rheostat Integral
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-INL
-2.0
±0.5
+2.0
LSb
5 k
Ω
5.5V, IW = 900 µA
-5.0
+3.5
+5.0
LSb
2.7V, IW = 430 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-2.0
±0.5
+2.0
LSb
10 k
Ω
5.5V, IW = 450 µA
-4.0
+2.5
+4.0
LSb
2.7V, IW = 215 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-1.125
±0.5
+1.125
LSb
50 k
Ω
5.5V, IW = 90 µA
-1.5
+1
+1.5
LSb
2.7V, IW = 43 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.8
±0.5
+0.8
LSb
100 k
Ω 5.5V, I
W = 45 µA
-1.125
+0.25
+1.125
LSb
2.7V, IW = 21.5 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
Rheostat
Differential
Non-linearity
MCP40D18
(Note 3)
MCP40D17 and
MCP40D19
devices only
(Note 3)
R-DNL
-0.5
±0.25
+0.5
LSb
5 k
Ω
5.5V, IW = 900 mA
-0.75
+0.5
+0.75
LSb
2.7V, IW = 430 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.5
±0.25
+0.5
LSb
10 k
Ω
5.5V, IW = 450 µA
-0.75
+0.5
+0.75
LSb
2.7V, IW = 215 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.375
±0.25
+0.375
LSb
50 k
Ω
5.5V, IW = 90 µA
-0.375
±0.25
+0.375
LSb
2.7V, IW = 43 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
-0.375
±0.25
+0.375
LSb
100 k
Ω 5.5V, I
W = 45 µA
-0.375
±0.25
+0.375
LSb
2.7V, IW = 21.5 µA (Note 6)
See Section 2.0
LSb
1.8V (Note 6)
Capacitance (PA)CAW
75
pF
f =1 MHz, Code = Full Scale
Capacitance (Pw)CW
120
pF
f =1 MHz, Code = Full Scale
Capacitance (PB)CBW
75
pF
f =1 MHz, Code = Full Scale
AC/DC CHARACTERISTICS (CONTINUED)
DC Characteristics
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
–40°C
≤ T
A ≤ +125°C (extended)
All parameters apply across the specified operating ranges unless noted.
VDD = +2.7V to 5.5V, 5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ devices.
Typical specifications represent values for VDD = 5.5V, TA = +25°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Note 1:
Resistance is defined as the resistance between terminal A to terminal B.
2:
INL and DNL are measured at VW with VA = VDD and VB = VSS.
3:
MCP40D18 device only, includes VWZSE and VWFSE.
4:
Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
5:
This specification by design.
6:
Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and
temperature.
7:
POR/BOR is not rate dependent.
8:
Supply current is independent of current through the resistor network


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