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RE46C126 Datasheet(PDF) 1 Page - Microchip Technology

Part # RE46C126
Description  CMOS Ionization Smoke Detector ASIC with Interconnect
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

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R&E International
A Subsidiary of Microchip Technology Inc.
RE46C126
CMOS Ionization Smoke Detector ASIC with Interconnect
Product Specification
© 2009 Microchip Technology Inc.
DS22170A-page 1
General Description
The RE46C126 is low power CMOS ionization type
smoke detector IC. With few external components this
circuit will provide all the required features for an
ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. . A 2/3 duty cycle continuous horn pattern is
used for the alarm condition.
An interconnect pin allows multiple detectors to be
connected such that when one unit alarms all units will
sound.
Although this device was designed for smoke detection
utilizing an ionization chamber it can be used in a
variety of security applications.
Utilizing low power CMOS technology the RE46C126
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
Guard Outputs for Ion Detector Input
+/-0.75pA Detect Input Current
Internal Reverse Battery Protection
Internal Low Battery Detection
Low Quiescent Current Consumption (<6.5uA)
Available in 16L PDIP or 16L N SOIC
ESD Protection on all Pins
Interconnect up to 40 Detectors
Compatible with MC14468
Available in Standard Packaging or RoHS
Complaint Pb Free Packaging
Pin Configuration
16
1
GUARD2
DETCOMP
2
DETECT
IO
15
3
GUARD1
LBADJ
14
4
VSEN
STROBE
13
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNITS
Supply Voltage
VDD
15
V
Input Voltage Range Except FEED, IO
Vin
-.3 to Vdd +.3
V
FEED Input Voltage Range
Vinfd
-10 to +22
V
IO Input Voltage Range
Vio1
-.3 to 17
V
Reverse Battery Time
TRB
5
S
Input Current except FEED
Iin
10
mA
Operating Temperature
TA
-10 to 60
°C
Storage Temperature
TSTG
-55 to 125
°C
Maximum Junction Temperature
TJ
150
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used
when handling this product. Damage can occur when exposed to extremely high static electrical charge
OSCAP
5
12
LED
VDD
RBIAS
FEED
6
HS
11
7
HB
10
VSS
8
9


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