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TC7SZ86F_09 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part No. TC7SZ86F_09
Description  2-Input EXCLUSIVE OR Gate
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC7SZ86F/FU
2009-09-09
3
Electrical Characteristics
DC Characteristics
Ta
= 25°C
Ta
= −40 to
85°C
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Min
Max
Unit
1.8
VCC
× 0.75
VCC
× 0.75
High level
VIH
2.3 to
5.5
VCC
× 0.7
VCC
× 0.7
1.8
VCC
× 0.25
VCC
× 0.25
Input voltage
Low level
VIL
2.3 to
5.5
VCC
× 0.3
VCC
× 0.3
V
1.8
1.7
1.8
1.7
2.3
2.2
2.3
2.2
3.0
2.9
3.0
2.9
IOH = −100 μA
4.5
4.4
4.5
4.4
IOH = −8 mA
2.3
1.9
2.15
1.9
IOH = −16 mA
3.0
2.4
2.8
2.4
IOH = −24 mA
3.0
2.3
2.68
2.3
High level
VOH
VIN = VIH
or VIL
IOH = −32 mA
4.5
3.8
4.2
3.8
V
1.8
0
0.1
0.1
2.3
0
0.1
0.1
3.0
0
0.1
0.1
IOL = 100 μA
4.5
0
0.1
0.1
IOL = 8 mA
2.3
0.1
0.3
0.3
IOL = 16 mA
3.0
0.15
0.4
0.4
IOL = 24 mA
3.0
0.22
0.55
0.55
Output voltage
Low level
VOL
VIN = VIH
or VIL
IOL = 32 mA
4.5
0.22
0.55
0.55
V
Input leakage current
IIN
VIN = 5.5 V or GND
0 to 5.5
±1
±10
μA
Power off leakage current
IOFF
VIN or VOUT = 5.5 V
0.0
1
10
μA
Quiescent supply current
ICC
VIN = VCC or GND
5.5
2
20
μA




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