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TPC6501 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPC6501 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TPC6501 2006-11-10 1 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2.0 Collector current Pulse ICP 3.5 A Base current IB 200 mA DC 0.8 Collector power dissipation t = 10 s PC (Note 1) 1.6 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) |
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