TPC6501

2006-11-10

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPC6501

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

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•

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Characteristics

Symbol

Rating

Unit

Collector-base voltage

20

V

Collector-emitter voltage

10

V

Emitter-base voltage

7

V

DC

2.0

Collector current

Pulse

3.5

A

Base current

200

mA

DC

0.8

Collector power

dissipation

t

= 10 s

1.6

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)