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TPC8121 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8121 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8121 2009-09-29 5 50 60 80 160 120 VDS VGS −6 −12 0 −15 −30 VDD = −24 V −6 −12 VDD = −24 V 040 10 20 30 −5 −10 −25 −20 0 −15 −30 −5 −10 −25 −20 (1) (2) 0 0.4 0.8 1.2 1.6 0 40 80 160 120 2 200 −80 −40 0 40 0 −2 −0.4 −1.2 −1.6 −0.8 Ciss Coss Crss 1000 10000 −0.1 −1 −10 −100 100 −10 −5 −3 VGS = 0 V −1 0 0.3 0.6 0.9 1.2 −0.1 −1 −10 −100 VGS = −4 V −5.5 A 0 6 18 30 −80 −40 0 40 80 120 160 VGS = −10 V RDS (ON) – Ta IDR – VDS Vth – Ta PD – Ta Common source Pulse test Common source Ta = 25°C Pulse test Common source VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = −10 V ID = −1mA Pulse test Common source ID = −11 A Ta = 25°C Pulse test Ambient temperature Ta (°C) Drain −source voltage VDS (V) Drain −source voltage VDS (V) Capacitance – VDS Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) Dynamic input/output characteristics (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t = 10 s 12 24 ID = −2.8 A −11 A −4 ID = −2.8 A,−5.5A,−11A |
Similar Part No. - TPC8121 |
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Similar Description - TPC8121 |
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