TPCP8510

2009-07-14

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

TPCP8510

High-Speed, High-Voltage Switching Applications

DC-DC Converter Applications

Characteristic

Symbol

Rating

Unit

Collector-base voltage

180

V

150

V

Collector-emitter voltage

120

V

Emitter-base voltage

7

V

DC

(Note 1)

1.0

Collector current

Pulse (Note 1)

2.0

A

Base current

0.1

A

t = 10s

2.25

Collector power

dissipation

DC

1.1

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Please use devices on condition that the junction temperature

is below 150°C.

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Figure 2. Marking

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1Q

Weight: 0.017 g (typ.)

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1.Emitter

5.Collector

2.Emitter

6.Collector

3.Emitter

7.Collector

4.Base

8.Collector

1　2　3　4

8　7　6　5

Type

Lot No.

Pin #1

8510

※

1　2　3　4

8　7　6　5

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