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TPCP8510 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8510 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TPCP8510 2009-07-14 1 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8510 High-Speed, High-Voltage Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 180 V VCEX 150 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 7 V DC (Note 1) IC 1.0 Collector current Pulse (Note 1) ICP 2.0 A Base current IB 0.1 A t = 10s 2.25 Collector power dissipation DC PC (Note 2) 1.1 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Please use devices on condition that the junction temperature is below 150°C. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Figure 1. Circuit configuration (top view) Figure 2. Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3V1Q Weight: 0.017 g (typ.) 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 1.Emitter 5.Collector 2.Emitter 6.Collector 3.Emitter 7.Collector 4.Base 8.Collector 1 2 3 4 8 7 6 5 Type Lot No. Pin #1 8510 ※ 1 2 3 4 8 7 6 5 ● |
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