TTA0001

2009-06-11

1

TOSHIBA Transistor Silicon PNP Triple Diffused Type

TTA0001

○

Power Amplifier Applications

• Complementary to TTC0001

• Recommended for 100-W high-fidelity audio frequency amplifier output

stage.

Characteristics

Symbol

Rating

Unit

Collector-base voltage

-160

V

Collector-emitter voltage

-160

V

Emitter-base voltage

-5

V

DC

-18

A

Collector current

Pulse

-35

A

Base current

-9

A

Collector power dissipation

150

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-16C1A

Weight : 4.7 g (typ.)

1.BASE

2.COLLECTOR(HEAT SINK)

3.EMITTER