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DCR2400B85 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR2400B85 Datasheet(HTML) 6 Page - Dynex Semiconductor |
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6 / 10 page  SEMICONDUCTOR DCR2400B85 6/10 www.dynexsemi.com 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) d.c. 180 120 90 60 30 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 Time ( s ) Double Side Cooling Anode Side Cooling Cathode Sided Cooling 1 2 3 4 Double side cooled Ri (°C/kW) 0.502 1.333 2.9559 2.2335 Ti (s) 0.0137081 0.0548877 0.3311925 1.6905 Anode side cooled Ri (°C/kW) 1.3035 3.138 1.1859 5.9136 Ti (s) 0.0251065 0.2410256 1.0806 11.002 Cathode side cooled Ri (°C/kW) 1.2616 2.6216 13.3603 0.8304 Ti (s) 0.0245837 0.2005035 5.7854 16.765 Zth = Á [Ri x ( 1-exp. (t/ti))] [1] ÁRth(j-c) Conduction Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Double side cooling Anode Side Cooling Cathode Sided Cooling ÁZth (z) ÁZth (z) ÁZth (z) ° sine. rect. ° sine. rect. ° sine. rect. 180 0.70 0.48 180 0.67 0.47 180 0.67 0.47 120 0.80 0.68 120 0.77 0.66 120 0.77 0.66 90 0.90 0.78 90 0.87 0.75 90 0.87 0.76 60 1.00 0.89 60 0.95 0.86 60 0.95 0.86 30 1.07 1.01 30 1.02 0.96 30 1.02 0.96 15 1.10 1.07 15 1.05 1.02 15 1.05 1.02 Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) |
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