SEMICONDUCTOR

DIM200WKS12-A000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Collector cut-off current

-

-

0.25

mA

(IGBT and Diode arm)

-

-

6

mA

Gate leakage current

-

-

1

µA

Gate threshold voltage

4.5

5.5

6.5

V

Collector-emitter saturation voltage

-

2.2

2.7

V

-

2.6

3.1

V

Diode forward current

DC

-

-

200

A

Diode maximum forward current

-

-

400

A

Diode forward voltage

-

2.2

2.5

V

(IGBT and Diode arm)

-

2.3

2.6

V

Input capacitance

-

33

-

nF

Module inductance per arm

-

-

20

-

nH

Internal resistance per arm

-

-

0.23

-

m

-

1375

-

A

10µs, Vge

15V

-

1125

-

A

IEC 60747-9

Note:

Measured at the power busbars and not the auxiliary terminals