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DIM800DDM17-A000 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DIM800DDM17-A000
Description  Dual Switch IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM800DDM17-A000 Datasheet(HTML) 4 Page - Dynex Semiconductor

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DIM800DDM17-A000
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 900V
RG(ON) = 2.2
RG(OFF) = 2.2
LS ~ 100nH
1250
ns
tf
Fall time
170
ns
EOFF
Turn-off energy loss
230
mJ
td(on)
Turn-on delay time
250
ns
tr
Rise time
250
ns
EON
Turn-on energy loss
220
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 900V
dIF/dt = 4000A/μs
200
μC
Irr
Diode reverse recovery current
460
A
Erec
Diode reverse recovery energy
130
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC = 800A
VGE = ±15V
VCE = 900V
RG(ON) = 2.2
RG(OFF) = 2.2
LS ~ 100nH
1500
ns
tf
Fall time
200
ns
EOFF
Turn-off energy loss
360
mJ
td(on)
Turn-on delay time
400
ns
tr
Rise time
250
ns
EON
Turn-on energy loss
340
mJ
Qrr
Diode reverse recovery charge
IF = 800A
VCE = 900V
dIF/dt = 4000A/μs
330
μC
Irr
Diode reverse recovery current
530
A
Erec
Diode reverse recovery energy
200
mJ


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