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2SK3265 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3265 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3265 2002-06-05 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3265 Chopper Regulators DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 700 V) l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 700 V Drain−gate voltage (RGS = 20 kΩ) VDGR 700 V Gate−source voltage VGSS ±30 V DC (Note 1) ID 10 A Drain current Pulse (Note 1) IDP 30 A Drain power dissipation PD 45 W Single pulse avalanche energy (Note 2) EAS 420 mJ Avalanche current IAR 10 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 2.78 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 Ω, IAR = 10 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) |
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