2SK3265

2002-06-05

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3265

Chopper Regulators DC−DC Converter, and Motor Drive

Applications

l Low drain−source ON resistance

l High forward transfer admittance

l Low leakage current

l Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

700

V

700

V

Gate−source voltage

±30

V

DC

(Note 1)

10

A

Drain current

Pulse (Note 1)

30

A

Drain power dissipation

45

W

Single pulse avalanche energy

(Note 2)

420

mJ

Avalanche current

10

A

Repetitive avalanche energy (Note 3)

4.5

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

2.78

°C / W

Thermal resistance, channel to

ambient

62.5

°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.

This transistor is an electrostatic sensitive device.

Please handle with caution.

Unit: mm

JEDEC

—

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)