EBE10UE8ACWB-6E-E datasheet(11/29 Pages) ELPIDA

Part #	EBE10UE8ACWB-6E-E

Description	1GB Unbuffered DDR2 SDRAM DIMM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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EBE10UE8ACWB

Data Sheet E1400E10 (Ver. 1.0)

11

AC Overshoot/Undershoot Specification (DDR2 SDRAM Component Specification)

Parameter

Pins

Specification

Unit

Maximum peak amplitude allowed for overshoot

Command, Address,

CKE, ODT

0.5

V

Maximum peak amplitude allowed for undershoot

0.5

V

Maximum overshoot area above VDD

DDR2-800

0.66

V-ns

DDR2-667

0.8

V-ns

Maximum undershoot area below VSS

DDR2-800

0.66

V-ns

DDR2-667

0.8

V-ns

Maximum peak amplitude allowed for overshoot

CK, /CK

0.5

V

Maximum peak amplitude allowed for undershoot

0.5

V

Maximum overshoot area above VDD

0.23

V-ns

Maximum undershoot area below VSS

0.23

V-ns

Maximum peak amplitude allowed for overshoot

DQ, DQS, /DQS,

0.5

V

Maximum peak amplitude allowed for undershoot

UDQS, /UDQS,

LDQS, /LDQS,

0.5

V

Maximum overshoot area above VDDQ

RDQS, /RDQS,

DM, UDM, LDM

0.23

V-ns

Maximum undershoot area below VSSQ

0.23

V-ns

Maximum amplitude

Overshoot area

Undershoot area

Volts (V)

Time (ns)

VDD, VDDQ

VSS, VSSQ

Overshoot/Undershoot Definition

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EBE10UE8ACWB-6E-E Datasheet(PDF) 11 Page - Elpida Memory

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