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EBJ21UE8BDS0-AE-F Datasheet(PDF) 10 Page - Elpida Memory |
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EBJ21UE8BDS0-AE-F Datasheet(HTML) 10 Page - Elpida Memory |
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10 / 21 page  EBJ21UE8BDS0 Preliminary Data Sheet E1513E10 (Ver. 1.0) 10 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 202 SDRAM minimum row active to row active delay (tRRD) 0 0 1 1 0 0 0 0 30H 6ns 203 Upper nibble for tFAW 0 0 0 0 0 0 0 0 00H 30.0ns 204 Minimum four activate window delay time (tFAW) 1 1 1 1 0 0 0 0 F0H 30.0ns 205 SDRAM minimum internal write to read command delay (tWTR) 0 0 1 1 1 1 0 0 3CH 7.5ns 206 Write to read & read to write command turn-around time pull-in 0 0 0 0 0 0 0 0 00H Default - No adjustment 207 Back to back command turn-around time pull-in 0 0 0 0 0 0 0 0 00H Default - No adjustment 208 System address/ command rate (1N or 2N mode) 0 0 0 0 0 0 0 0 00H System operates in default mode 209 Auto self-refresh performance (sub 1x refresh and IDD6 impacts) 0 0 0 0 0 0 0 0 00H TBD 210 to 218 Reserved 0 0 0 0 0 0 0 0 00H 219 Vendor personality byte 0 0 0 0 0 0 0 0 00H [For Profile 2] Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 220 Module VDD voltage level (extreme settings) 0 0 1 0 1 1 0 0 2CH 1.60V 221 SDRAM minimum cycle time (tCK (min)) 0 0 0 0 1 0 1 0 0AH DDR3-1600 222 Minimum CAS latency time (tAA (min)) 0 1 1 0 1 0 0 1 69H 13.125ns 223 SDRAM /CAS latencies supported, LSB (CL MASK) 1 0 1 1 1 1 0 0 BCH 6, 7, 8, 9, 11 224 SDRAM /CAS latencies supported, MSB (CL MASK) 0 0 0 0 0 0 0 0 00H 225 Minimum CAS write latency time (tCWL (min)) 0 1 1 0 1 0 0 1 69H 13.125ns 226 SDRAM minimum row precharge time (tRP) 0 1 1 0 1 0 0 1 69H 13.125ns 227 SDRAM minimum /RAS to /CAS delay (tRCD) 0 1 1 0 1 0 0 1 69H 13.125ns 228 SDRAM write recovery time (tWR (min)) 0 1 1 1 1 0 0 0 78H 15ns 229 SDRAM upper nibbles for tRAS and tRC 0 0 0 1 0 0 0 1 11H 230 SDRAM minimum active to precharge time (tRAS), LSB 0 0 0 1 1 0 0 0 18H 35ns 231 SDRAM minimum active to active /auto- refresh time (tRC), LSB 1 0 0 0 0 1 1 0 86H 48.75ns 232 Maximum average periodic refresh interval (tREFI), LSB 0 0 1 1 1 1 1 1 3FH 7.8us 233 Maximum average periodic refresh interval (tREFI), MSB 0 0 0 0 0 0 0 0 00H 7.8us 234 SDRAM minimum refresh recovery time delay (tRFC), LSB 0 1 1 1 0 0 0 0 70H 110ns 235 SDRAM minimum refresh recovery time delay (tRFC), MSB 0 0 0 0 0 0 1 1 03H 110ns 236 SDRAM minimum internal read to precharge command delay (tRTP) 0 0 1 1 1 1 0 0 3CH 7.5ns 237 SDRAM minimum row active to row active delay (tRRD) 0 0 1 1 0 0 0 0 30H 6ns |
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