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EBJ21UE8BDF0-DJ-F Datasheet(PDF) 9 Page - Elpida Memory

Part # EBJ21UE8BDF0-DJ-F
Description  2GB Unbuffered DDR3 SDRAM DIMM
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EBJ21UE8BDF0-DJ-F Datasheet(HTML) 9 Page - Elpida Memory

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EBJ21UE8BDF0
Preliminary Data Sheet E1515E10 (Ver. 1.0)
9
SPD for Intel Extreme Memory Profile (EBJ21UE8BDF0-GN)
Byte No. Function described
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex
value
Comments
176
Intel extreme memory profile ID string
0
0
0
0
1
1
0
0
0CH
Intel Extreme Memory
Profile ID String
177
Intel extreme memory profile ID string
0
1
0
0
1
0
1
0
4AH
Intel Extreme Memory
Profile ID String
178
Intel extreme memory profile
organization type
0
0
0
0
0
0
1
1
03H
Profile 1: Enabled /
Profile 2: Enabled /
Profile 1: 1 DIMM per
CH / Profile 2: 1
DIMM per CH /
179
Intel extreme memory profile revision
0
0
0
1
0
0
0
1
11H
Revision 1.1
180
Medium timebase (MTB) dividend
for profile 1
0
0
0
0
0
0
0
1
01H
1
181
Medium timebase (MTB) divisor
for profile 1
0
0
0
0
1
0
0
0
08H
8
182
Medium timebase (MTB) dividend
for profile 2
0
0
0
0
0
0
0
1
01H
1
183
Medium timebase (MTB) divisor
for profile 2
0
0
0
0
1
0
0
0
08H
8
184
Reserved for global byte
0
0
0
0
0
0
0
0
00H
[For Profile 1]
Byte No. Function described
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
Hex
value
Comments
185
Module VDD voltage level
0
0
1
0
1
0
1
0
2AH
1.50V
186
SDRAM minimum cycle time
(tCK (min.))
0
0
0
0
1
0
1
0
0AH
DDR3-1600
187
SDRAM minimum /CAS latencies time
(tAA (min.))
0
1
1
0
1
0
0
1
69H
13.125ns
188
SDRAM /CAS latencies supported, LSB
(CL MASK)
1
0
1
1
1
1
0
0
BCH
6, 7, 8, 9, 11
189
SDRAM /CAS latencies supported, MSB
(CL MASK)
0
0
0
0
0
0
0
0
00H
190
Minimum CAS write latency time
(tCWL(min))
0
1
1
0
1
0
0
1
69H
13.125ns
191
SDRAM minimum row precharge time
(tRP)
0
1
1
0
1
0
0
1
69H
13.125ns
192
SDRAM minimum /RAS to /CAS delay
(tRCD)
0
1
1
0
1
0
0
1
69H
13.125ns
193
SDRAM write recovery time (tWR (min))
0
1
1
1
1
0
0
0
78H
15ns
194
SDRAM upper nibbles for tRAS and tRC
0
0
0
1
0
0
0
1
11H
195
SDRAM minimum active to precharge
time (tRAS), LSB
0
0
0
1
1
0
0
0
18H
35ns
196
SDRAM minimum active to active /auto-
refresh time (tRC), LSB
1
0
0
0
0
1
1
0
86H
48.75ns
197
Maximum average periodic refresh interval
(tREFI), LSB
0
0
1
1
1
1
1
1
3FH
7.8
µs
198
Maximum average periodic refresh interval
(tREFI), MSB
0
0
0
0
0
0
0
0
00H
7.8
µs
199
SDRAM minimum refresh recovery time
delay (tRFC), LSB
0
1
1
1
0
0
0
0
70H
110ns
200
SDRAM minimum refresh recovery time
delay (tRFC), MSB
0
0
0
0
0
0
1
1
03H
110ns
201
SDRAM minimum internal read to
precharge command delay (tRTP)
0
0
1
1
1
1
0
0
3CH
7.5ns


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