EDL6416CBBH datasheet(6/59 Pages) ELPIDA

Part #	EDL6416CBBH

Description	64M bits Mobile RAM?

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Manufacturer	ELPIDA [Elpida Memory]

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EDL6416CBBH

Preliminary Data Sheet E1138E21 (Ver. 2.1)

6

Notes: 1. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open.

In addition to this, IDD4 is measured on condition that addresses are changed only one time during

tCK (min.).

2. IDD5 is measured on condition that addresses are changed only one time during tCK (min.).

3. IDD6 is specified when self refresh state is maintained long enough under the specified TA condition, after

a busy sequence of read and write operations

DC Characteristics 2 (TA = –25

°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)

Parameter

Symbol

min.

max.

Unit

Test condition

Notes

Input leakage current

ILI

–2.0

2.0

µA

0 ≤ VIN ≤ VDDQ

Output leakage current

ILO

–1.5

1.5

µA

0 ≤ VOUT ≤ VDDQ, DQ = disable

Output high voltage

VOH

VDDQ – 0.2

—

V

IOH = –0.1 mA

Output low voltage

VOL

—

0.2

V

IOL = 0.1 mA

Pin Capacitance (TA = 25°C, f = 1MHz)

Parameter

Symbol

Pins

min.

typ.

max.

Unit

Notes

Input capacitance

CI1

CLK

2.0

—

4.5

pF

CI2

All other input-only pins

2.0

—

4.5

pF

Data input/output capacitance

CI/O

DQ

3.5

—

6

pF

AC Characteristics (TA = –25

°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V)

Test Conditions

• AC high level input voltage / low level input voltage: 1.6 / 0.2V

• Input timing measurement reference level: 0.9V

• Transition time (Input rise and fall time): 0.5ns

• Output timing measurement reference level: 0.9V

• Output load: CL = 30pF

tCK

tCH

tCL

1.6 V

0.9 V

0.2 V

CLK

1.6 V

0.9 V

0.2 V

Input

tSETUP

tHOLD

Output

tAC

tOH

I/O

CL

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