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EDJ1116BABG-AC-E Datasheet(PDF) 7 Page - Elpida Memory |
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EDJ1116BABG-AC-E Datasheet(HTML) 7 Page - Elpida Memory |
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7 / 148 page  EDJ1108BABG, EDJ1116BABG Data Sheet E1248E40 (Ver. 4.0) 7 Electrical Conditions • All voltages are referenced to VSS (GND) • Execute power-up and Initialization sequence before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit Notes Power supply voltage VDD −0.4 to +1.975 V 1, 3 Power supply voltage for output VDDQ −0.4 to +1.975 V 1, 3 Input voltage VIN −0.4 to +1.975 V 1 Output voltage VOUT −0.4 to +1.975 V 1 Reference voltage VREFCA −0.4 to 0.6 × VDD V 3 Reference voltage for DQ VREFDQ −0.4 to 0.6 × VDDQ V 3 Storage temperature Tstg −55 to +100 °C 1, 2 Power dissipation PD 1.0 W 1 Short circuit output current IOUT 50 mA 1 Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage temperature is the case surface temperature on the center/top side of the DRAM. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than 0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Operating Temperature Condition Parameter Symbol Rating Unit Notes Operating case temperature TC 0 to +95 °C 1, 2, 3 Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C under all operating conditions. 3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply: a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9µs. (This double refresh requirement may not apply for some devices.) b) If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit [A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]). |
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