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EDD5116AFTA-6BH-E Datasheet(PDF) 7 Page - Elpida Memory

Part # EDD5116AFTA-6BH-E
Description  512M bits DDR SDRAM High Quality Product
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDD5116AFTA-6BH-E Datasheet(HTML) 7 Page - Elpida Memory

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EDD5116AFTA-H
Preliminary Data Sheet E0957E30 (Ver. 3.0)
7
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0°C to +70
°C, VDD, VDDQ = 2.6V ± 0.1V, VSS, VSSQ = 0V) [DDR400]
(TA = 0°C to +70
°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [DDR333]
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–2
2
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
–5
5
µA
VDDQ ≥ VOUT ≥ VSS
Output high current
IOH
–15.2
mA
VOUT = 1.95V
Output low current
IOL
15.2
mA
VOUT = 0.35V
Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.6V ± 0.1V, VSS, VSSQ = 0V) [DDR400]
(TA = +25°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) [DDR333]
Parameter
Symbol
Pins
min.
typ.
max.
Unit
Notes
Input capacitance
CI1
CK, /CK
2.0
3.0
pF
1
CI2
All other input pins
2.0
3.0
pF
1
Delta input capacitance
Cdi1
CK, /CK
0.25
pF
1
Cdi2
All other input-only pins
0.5
pF
1
Data input/output capacitance
CI/O
DQ, DM, DQS
4.0
5
pF
1, 2
Delta input/output capacitance
Cdio
DQ, DM, DQS
0.5
pF
1
Notes: 1. These parameters are measured on conditions: f = 100MHz, VOUT = VDDQ/2,
ΔVOUT = 0.2V.
2. DOUT circuits are disabled.


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