EBE10AD4AGFA-6E-E datasheet(6/23 Pages) ELPIDA

Part #	EBE10AD4AGFA-6E-E

Description	1GB Registered DDR2 SDRAM DIMM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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EBE10AD4AGFA

Preliminary Data Sheet E0865E11 (Ver. 1.1)

6

Byte No.

Function described

Bit7

Bit6

Bit5

Bit4

Bit3

Bit2

Bit1

Bit0

Hex value

Comments

28

Minimum row active to row active delay

(tRRD)

0

1

0

1EH

7.5ns

29

Minimum /RAS to /CAS delay (tRCD)

0

1

0

3CH

15ns

30

Minimum active to precharge time

(tRAS)

-6E, -5C

0

1

0

1

0

1

2DH

45ns

-4A

0

1

0

1

0

28H

40ns

31

Module rank density

0

1

01H

1GB

32

Address and command setup time

before clock (tIS)

-6E

0

1

0

20H

0.20ns*

1

-5C

0

1

0

1

0

1

25H

0.25ns*

1

-4A

0

1

0

1

0

1

35H

0.35ns*

1

33

Address and command hold time after

clock (tIH)

-6E

0

1

0

1

0

28H

0.28ns*

1

-5C

0

1

0

38H

0.38ns*

1

-4A

0

1

0

1

0

48H

0.48ns*

1

34

Data input setup time before clock

(tDS)

-6E, -5C

0

1

0

10H

0.10ns*

1

-4A

0

1

0

1

0

1

15H

0.15ns*

1

35

Data input hold time after clock (tDH)

-6E

0

1

0

18H

0.18ns*

1

-5C

0

1

0

1

23H

0.23ns*

1

-4A

0

1

0

1

0

28H

0.28ns*

1

36

Write recovery time (tWR)

0

1

0

3CH

15ns*

1

37

Internal write to read command delay

(tWTR)

-6E, -5C

0

1

0

1EH

7.5ns*

1

-4A

0

1

0

1

0

28H

10ns*

1

38

Internal read to precharge command

delay (tRTP)

0

1

0

1EH

7.5ns*

1

39

Memory analysis probe characteristics 0

0

00H

TBD

40

Extension of Byte 41 and 42

0

00H

Undefined

41

Active command period (tRC)

-6E, -5C

0

1

0

3CH

60ns*

1

-4A

0

1

0

1

37H

55ns*

1

42

Auto refresh to active/

Auto refresh command cycle (tRFC)

0

1

0

1

0

1

69H

105ns*

1

43

SDRAM tCK cycle max. (tCK max.)

1

0

80H

8ns*

1

44

Dout to DQS skew

-6E

0

1

0

18H

0.24ns*

1

-5C

0

1

0

1EH

0.30ns*

1

-4A

0

1

0

1

23H

0.35ns*

1

45

Data hold skew (tQHS)

-6E

0

1

0

1

0

22H

0.34ns*

1

-5C

0

1

0

1

0

28H

0.40ns*

1

-4A

0

1

0

1

0

1

2DH

0.45ns*

1

46

PLL relock time

0

1

0FH

15

µs

47 to 61

0

00H

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