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EDE5108ABSE-BE Datasheet(PDF) 5 Page - Elpida Memory

Part # EDE5108ABSE-BE
Description  512M bits DDR2 SDRAM for HYPER DIMM
Download  65 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDE5108ABSE-BE Datasheet(HTML) 5 Page - Elpida Memory

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EDE5108ABSE-BE, -AE
Preliminary Data Sheet E0540E11 (Ver. 1.1)
5
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Power supply voltage
VDD
−1.0 to +2.3
V
1
Power supply voltage for output
VDDQ
−0.5 to +2.3
V
1
Input voltage
VIN
−0.5 to +2.3
V
1
Output voltage
VOUT
−0.5 to +2.3
V
1
Storage temperature
Tstg
−55 to +100
°C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device.
This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage.
The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification.
Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Symbol
Rating
Unit
Note
Operating case temperature
TC
0 to +85
°C
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The operation temperature range is the temperature where all DRAM specification will be supported. Out
side of this temperature range, even it is still within the limit of stress condition, some deviation on portion
of operation specification may be required.
During operation, the DRAM case temperature must be maintained between 0 to +85°C under all other
specification parameters.


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