GT25Q301 datasheet(5/7 Pages) TOSHIBA

Part #	GT25Q301

Description	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

GT25Q301

2003-01-28

5

Gate charge QG (nC)

Collector-emitter voltage VCE (V)

Safe Operating Area

Forward voltage VF (V)

Forward current IF (A)

VCE, VGE – QG

C – VCE

0.3

1

0.1

300

100

10

30

1000

3000

10000

3

10

30

300

1000

Common emitter

VGE = 0

f = 1 MHz

Tc = 25°C

Cies

Coes

Cres

100

Common emitter

RL = 12 Ω

Tc = 25°C

0

40

80

120

160

200

0

4

8

12

16

20

200

400

600

800

1000

VCE = 200 V

600

400

Reverse Bias SOA

0.3

1

3

10

0.5

1

3

5

10

30

100

300

3000

1000

0.1

100

50

Tj ≤ 125°C

VGE = ±15 V

RG = 43 Ω

IF – VF

50

40

30

20

10

0

1

2

3

4

5

Tc = 125°C

Common emitter

VGE = 0

25

−40

trr, Irr – IF

25

10

0

5

10

15

20

30

1

30

100

Common emitter

di/dt = −200 A/µs

VGE = 0

: Tc = 25°C

: Tc = 125°C

3

trr

Irr

100

10

1000

0.3

1

3

10

0.5

1

3

5

10

30

100

300

3000

1000

0.1

100

50

*: Single

nonrepetitive

pulse Tc = 25°C

Curves must be

derated linearly with

increase in

temperature.

IC max (pulsed)*

IC max (continuous)

DC operation

1 ms*

100 µs*

50 µs*

10 ms*

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GT25Q301 Datasheet(PDF) 5 Page - Toshiba Semiconductor

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