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GT25Q301 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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GT25Q301 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page GT25Q301 2003-01-28 5 Gate charge QG (nC) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Safe Operating Area Forward voltage VF (V) Forward current IF (A) VCE, VGE – QG C – VCE 0.3 1 0.1 300 100 10 30 1000 3000 10000 3 10 30 300 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cies Coes Cres 100 Common emitter RL = 12 Ω Tc = 25°C 0 0 40 80 120 160 200 0 4 8 12 16 20 200 400 600 800 1000 VCE = 200 V 600 400 Reverse Bias SOA 0.3 1 3 10 0.5 1 3 5 10 30 30 100 300 3000 1000 0.1 100 50 Tj ≤ 125°C VGE = ±15 V RG = 43 Ω IF – VF 50 40 30 20 10 0 0 1 2 3 4 5 Tc = 125°C Common emitter VGE = 0 25 −40 trr, Irr – IF 25 10 0 5 10 15 20 30 1 30 100 Common emitter di/dt = −200 A/µs VGE = 0 : Tc = 25°C : Tc = 125°C 3 trr Irr 100 10 1000 0.3 1 3 10 0.5 1 3 5 10 30 30 100 300 3000 1000 0.1 100 50 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 µs* 50 µs* 10 ms* |
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