EBR12EC8ABKD

Preliminary Data Sheet E0313E11 (Ver. 1.1)

8

Electrical Specifications

Absolute Maximum Ratings

Symbol

Parameter

min.

max.

Unit

VI,ABS

Voltage applied to any RSL or CMOS signal pad with

respect to GND

−0.3

VDD + 0.3

V

VDD,ABS

Voltage on VDD with respect to GND

−0.5

VDD + 1.0

V

TSTORE

Storage temperature

−50

+100

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage.

The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Recommended Electrical Conditions

Symbol

Parameter and conditions

min.

max.

Unit

VDD

Supply voltage

*1

2.50

− 0.13

2.50 + 0.13

V

VCMOS

CMOS I/O power supply at pad

2.5V controllers

2.50

− 0.13

2.50 + 0.25

V

1.8V controllers

1.8

− 0.1

1.8 + 0.2

V

VREF

Reference voltage

*1

1.4

− 0.2

1.4 + 0.2

V

SVDD

Serial Presence Detector- positive power supply

2.2

3.6

V

VTERM

Termination Voltage

1.89

− 0.09

1.89 + 0.09

V

Note: 1. See Direct RDRAM datasheet for more details.