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EBR51EC8ABFD-8C Datasheet(PDF) 7 Page - Elpida Memory |
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EBR51EC8ABFD-8C Datasheet(HTML) 7 Page - Elpida Memory |
7 / 12 page EBR51EC8ABFD Data Sheet E0315E21 (Ver. 2.1) 7 Electrical Specifications Absolute Maximum Ratings Symbol Parameter min. max. Unit VI,ABS Voltage applied to any RSL or CMOS signal pad with respect to GND −0.3 VDD + 0.3 V VDD,ABS Voltage on VDD with respect to GND −0.5 VDD + 1.0 V TSTORE Storage temperature −50 +100 °C Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Recommended Electrical Conditions Symbol Parameter and conditions min. max. Unit VDD Supply voltage* 1 2.50 − 0.13 2.50 + 0.13 V VCMOS CMOS I/O power supply at pad 2.5V controllers 2.50 − 0.13 2.50 + 0.25 V 1.8V controllers 1.8 − 0.1 1.8 + 0.2 V VREF Reference voltage* 1 1.4 − 0.2 1.4 + 0.2 V SVDD Serial Presence Detector- positive power supply 2.2 3.6 V Note: See Direct RDRAM datasheet for more details. |
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