HB52RD328DC-B6F datasheet(11/67 Pages) ELPIDA

Part #	HB52RD328DC-B6F

Description	256 MB Unbuffered SDRAM S.O.DIMM 32-Mword 횞 64-bit, 100 MHz Memory Bus, 2-Bank Module (32 pcs of 16 M 횞 4 components) PC100 SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

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11 / 67 page

HB52RD328DC-F

Data Sheet E0111H10

11

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Note

Voltage on any pin relative to V

SS

V

T

–0.5 to V

CC + 0.5

(

≤ 4.6 (max))

V1

Supply voltage relative to V

SS

V

CC

–0.5 to +4.6

V

1

Short circuit output current

Iout

50

mA

Power dissipation

P

T

4.0

W

Operating temperature

Topr

0 to +65

°C

Storage temperature

Tstg

–55 to +125

°C

Note:

1. Respect to V

SS.

DC Operating Conditions (Ta = 0 to +65°C)

Parameter

Symbol

Min

Max

Unit

Notes

Supply voltage

V

CC

3.0

3.6

V

1, 2

V

SS

00V

3

Input high voltage

V

IH

2.0

V

CC + 0.3

V

1, 4, 5

Input low voltage

V

IL

–0.3

0.8

V

1, 6

Notes: 1. All voltage referred to V

SS

2. The supply voltage with all V

CC pins must be on the same level.

3. The supply voltage with all V

SS pins must be on the same level.

4. CK, CKE,

S, DQMB, DQ pins: V

IH (max) = VCC + 0.5 V for pulse width

≤ 5 ns at V

CC.

5. Others: V

IH (max) = 4.6 V for pulse width

≤ 5 ns at V

CC.

6. V

IL (min) = –1.0 V for pulse width

≤ 5 ns at V

SS.

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