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EDD2508AJTA-7A Datasheet(PDF) 5 Page - Elpida Memory |
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EDD2508AJTA-7A Datasheet(HTML) 5 Page - Elpida Memory |
5 / 50 page EDD2504AJTA, EDD2508AJTA Preliminary Data Sheet E0145E50 (Ver. 5.0) 5 DC Characteristics 1 (TA = 0 to +70 °C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) max. Parameter Symbol Grade × 4 × 8 Unit Test condition Notes Operating current (ACT-PRE) IDD0 -6B -7A, -7B 120 110 120 110 mA CKE ≥ VIH, tRC = tRC (min.) 1, 2, 9 Operating current (ACT-READ-PRE) IDD1 -6B -7A, -7B 150 140 150 140 mA CKE ≥ VIH, BL = 4, CL = 2.5, tRC = tRC (min.) 1, 2, 5 Idle power down standby current IDD2P 3 3 mA CKE ≤ VIL 4 Floating idle standby current IDD2F -6B -7A, -7B 35 30 35 30 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 5 Quiet idle standby current IDD2Q -6B -7A, -7B 30 25 30 25 mA CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 4, 10 Active power down standby current IDD3P 20 20 mA CKE ≤ VIL 3 Active standby current IDD3N -6B -7A, -7B 55 50 55 50 mA CKE ≥ VIH, /CS ≥ VIH tRAS = tRAS (max.) 3, 5, 6 Operating current (Burst read operation) IDD4R -6B -7A, -7B 195 170 205 180 mA CKE ≥ VIH, BL = 2, CL = 2.5 1, 2, 5, 6 Operating current (Burst write operation) IDD4W -6B -7A, -7B 195 170 205 180 mA CKE ≥ VIH, BL = 2, CL = 2.5 1, 2, 5, 6 Auto Refresh current IDD5 -6B -7A, -7B 250 225 250 225 mA tRFC = tRFC (min.), Input ≤ VIL or ≥ VIH Self refresh current IDD6 3 3 mA Input ≥ VDD – 0.2 V Input ≤ 0.2 V Operating current (4 banks interleaving) IDD7A -6B -7A, -7B 350 320 360 330 mA BL = 4 5, 6, 7 Notes: 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one clock cycle. 6. DQ, DM and DQS transition twice per one clock cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once every two clock cycle. 10. Command/Address stable at ≥ VIH or ≤ VIL. DC Characteristics 2 (TA = 0 to +70 °C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V) Parameter Symbol min. max. Unit Test condition Notes Input leakage current ILI –2 2 µA VDD ≥ VIN ≥ VSS Output leakage current ILO –5 5 µA VDDQ ≥ VOUT ≥ VSS Output high current IOH –15.2 — mA VOUT = 1.95V Output low current IOL 15.2 — mA VOUT = 0.35V |
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