HM51W16165LJ-7 datasheet(11/35 Pages) ELPIDA

Part #	HM51W16165LJ-7

Description	16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh

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Manufacturer	ELPIDA [Elpida Memory]

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HM51W16165 Series, HM51W18165 Series

Data Sheet E0153H10

11

AC Characteristics (Ta = 0 to +70°C, V

CC = 3.3 V ± 0.3 V, VSS = 0 V)*

1, *2, *18, *19, *20

Test Conditions

• Input rise and fall time: 2 ns

• Input levels: 0 V, 3.0 V

• Input timing reference levels: 0.8 V, 2.0 V

• Output timing reference levels: 0.8 V, 2.0 V

• Output load: 1 TTL gate + C

L (100 pF) (Including scope and jig)

Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)

HM51W16165/HM51W18165

-5

-6

-7

Parameter

Symbol

Min

Max

Min

Max

Min

Max

Unit

Notes

Random read or write cycle time

t

RC

84

—

104

—

124

—

ns

RAS precharge time

t

RP

30

—

40

—

50

—

ns

CAS precharge time

t

CP

8—10

—

13

—ns

RAS pulse width

t

RAS

50

10000 60

10000 70

10000 ns

CAS pulse width

t

CAS

8

10000 10

10000 13

10000 ns

Row address setup time

t

ASR

0—0—0—ns

Row address hold time

t

RAH

8—10

—

10

—ns

Column address setup time

t

ASC

0—0—0—ns

21

Column address hold time

t

CAH

8—10

—

13

—ns

21

RAS to CAS delay time

t

RCD

12

37

14

45

14

52

ns

3

RAS to column address delay time t

RAD

10

25

12

30

12

35

ns

4

RAS hold time

t

RSH

10

—

13

—

13

—

ns

CAS hold time

t

CSH

35

—

40

—

45

—

ns

23

CAS to RAS precharge time

t

CRP

5—5—5—ns

22

OE to Din delay time

t

OED

13

—

15

—

18

—

ns

5

OE delay time from Din

t

DZO

0—0—0—ns

6

CAS delay time from Din

t

DZC

0—0—0—ns

6

Transition time (rise and fall)

t

T

250

2

50

250

ns

7

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HM51W16165LJ-7 Datasheet(PDF) 11 Page - Elpida Memory

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