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HM5316123BF-10 Datasheet(PDF) 8 Page - Elpida Memory

Part # HM5316123BF-10
Description  131,072-word x 16-bit Multiport CMOS Video RAM
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

HM5316123BF-10 Datasheet(HTML) 8 Page - Elpida Memory

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HM5316123B Series
Color Register Set/Read Cycle (
CAS high,
DT/OE high, WEU and WEL high and DSF1 high
at the falling edge of
RAS)
In color register set cycle, color data is set to the
internal color register used in flash write cycle or
block write cycle. 16 bits of internal color register
are provided at each I/O.
This register is
composed of static circuits, so once it is set, it
retains the data until reset. Since color register set
cycle is just as same as the usual write cycle, so
read, early write and delayed write cycle can be
executed.
In this cycle, the HM5316123B
refreshes the row address fetched at the falling
edge of
RAS.
Mask Register Set/Read Cycle (
CAS high,
DT/OE high, WEU and WEL high, and DSF1 high
at the falling edge of
RAS)
In mask register set cycle, mask data is set to the
internal mask register used in mask write cycle,
block write cycle, flash write cycle, masked write
transfer, and masked split write transfer. 16 bits of
internal mask register are provided at each I/O.
This mask register is composed of static circuits,
so once it is set, it retains the data until reset.
Since mask register set cycle is just as same as the
usual read and write cycle, so read, early and
delayed write cycles can be executed.
Flash Write Cycle (
CAS high, DT/OE high, WEU
or
WEL low, and DSF1 high at the falling edge of
RAS)
In a flash write cycle, a row of data (256 word x 16
bit) is cleared to 0 or 1 at each I/O according to the
data of color register mentioned before. It is also
necessary to mask I/O in this cycle. When
CAS
and
DT/OE is set high, WEU or WEL is low, and
DSF1 is high at the falling edge of
RAS, this cycle
starts. Then, the row address to clear is given to
row address. Mask data is as same as that of a
RAM write cycle.
Cycle time is the same as
those of RAM read/write cycles, so all bits can be
cleared in 1/256 of the usual cycle time. (See
figure 1.)
RAS
CAS
Address
WEU,WEL
DT/OE
DSF1
I/O
Color Register Set Cycle
Flash Write Cycle
Flash Write Cycle
Row
Xi
Xj
*1
*1
Color Data
Set color register
Execute flash write into each
I/O on row address Xi using
color register.
Execute flash write into
each I/O on row address
Xj using color register.
Note: 1. I/O Mask Data (In new mask mode)
Low: Mask
High: Non Mask
In persistent mask mode, I/O don't care
Figure 1 Use of Flash Write
Preliminary Data Sheet E0160H10


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