HB52D168GB-A6BL datasheet(6/19 Pages) ELPIDA

Part #	HB52D168GB-A6BL

Description	128 MB Unbuffered SDRAM Micro DIMM 16-Mword 횞 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M 횞 16 components) PC133/100 SDRAM

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Manufacturer	ELPIDA [Elpida Memory]

Direct Link	http://www.elpida.com/en

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6 / 19 page

HB52F168GB-B, HB52D168GB-B

Data Sheet E0008H10

6

Byte No. Function described

Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

20

SDRAM device attributes:

W latency

0000000101

0

21

SDRAM module attributes

0000000000

Unbuffer

22

SDRAM device attributes:

General

000011100E

V

CC ± 10%

23

SDRAM cycle time

(2nd highest

CE latency)

(-75/A6) 10 ns

10100000A0

CL = 2

(-B6) 15 ns

11110000F0

24

SDRAM access from Clock

(2nd highest

CE latency)

(-75/A6) 6 ns

0110000060

(-B6) 8 ns

1000000080

25

SDRAM cycle time

(3rd highest

CE latency)

Undefined

0000000000

26

SDRAM access from Clock

(3rd highest

CE latency)

Undefined

0000000000

27

Minimum row precharge time

0001010014

20 ns

28

Row active to row active min

(-75)

000011110F

15 ns

(-A6/B6)

0001010014

20 ns

29

RE to CE delay min

0001010014

20 ns

30

Minimum

RE pulse width

(-75)

001011012D

45 ns

(-A6/B6)

0011001032

50 ns

31

Density of each bank on

module

0010000020

128M byte

32

Address and command signal

input setup time

(-75)

0001010115

1.5 ns

(-A6/B6)

0010000020

2.0 ns

33

Address and command signal

input hold time

(-75)

0000100008

0.8 ns

(-A6/B6)

0001000010

1.0 ns

34

Data signal input setup time

(-75)

0001010115

1.5 ns

(-A6/B6)

0010000020

2.0 ns

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HB52D168GB-A6BL Datasheet(PDF) 6 Page - Elpida Memory

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